TOPICS
The scope of the Workshop includes the basic
physics and chemistry of all II-VI materials and
their applications. Materials of interest include
HgCdTe, ZnSe, ZnO, CdTe, and CdZnTe. Issues
in the following critical areas are of interest:
 Strained Layer Superlattices: III-V and II-VI
Emerging Detector Technologies
- Multiband Detector Development
- Near-Room-Temperature IR Devices
- HgCdTe Avalanche Photodiodes
ZnO Materials and Devices
Materials Growth and Characterization
- Control of composition, carrier concentration, and lifetime
- Novel material and device structures
- Modeling of growth and processing
- Equilibrium and non-equilibrium growth
Substrates for HgCdTe: CdZnTe and Alternatives
Defects and Doping
- Physics of Failure
- Characterization, particularly non-destructive
- Effect on electrical and optical properties
- Thermodynamics
- P-doping issues in HgCdTe
- Impurities
- Diffusion
- Activation and segregation
- Dislocations: generation mechanisms,
properties, kinetics, characterization,
mitigation
Surfaces and Interfaces
- Etching, passivation, and metallization
Modeling and Simulation
- Material properties
- Growth and processing
- Device physics
Characterization of Materials
- Electrical, optical, and microstructural characterization
- Defects and impurities
- Contactless and other non-destructive methods
- Device-material correlations
X-Ray & Gamma-Ray Radiation Detectors
Radiation Effects in HgCdTe
II-VI-Based Solar Cells
|
|
|
Special Sessions
- Substrates for HgCdTe:
CdZnTe and Alternative Product Availability
- What Works and What Doesn’t
- Junction Formation Techniques: Limitations and Advantageous
- Heterostructures vs. Homojunctions
- Planar vs. Mesa
- Interface/lattice mismatch limitations
Detectors & Materials
- ZnO
- HgCdTe
- CdZnTe
- Gamma Ray
- X-Ray
- IR
- UV
- III-V antimony based materials
|
